2SA1312G

2SA1312GRTE85LF vs 2SA1312GRTE85LFCT-ND vs 2SA1312GRTE85LFDKR-ND

 
PartNumber2SA1312GRTE85LF2SA1312GRTE85LFCT-ND2SA1312GRTE85LFDKR-ND
DescriptionBipolar Transistors - BJT PNP Audio Amp VCEO -120V HFE 700
ManufacturerToshiba--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-346-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 120 V--
Collector Base Voltage VCBO- 120 V--
Emitter Base Voltage VEBO- 5 V--
Gain Bandwidth Product fT100 MHz--
Series2SA1312--
DC Current Gain hFE Max700--
PackagingReel--
BrandToshiba--
Continuous Collector Current- 100 mA--
DC Collector/Base Gain hfe Min200--
Pd Power Dissipation150 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000988 oz--
Fabricante Parte # Descripción RFQ
Toshiba
Toshiba
2SA1312GRTE85LF Bipolar Transistors - BJT PNP Audio Amp VCEO -120V HFE 700
2SA1312GRTE85LF Bipolar Transistors - BJT PNP Audio Amp VCEO -120V HFE 700
2SA1312GRTE85LFCT-ND Nuevo y original
2SA1312GRTE85LFDKR-ND Nuevo y original
2SA1312GRTE85LFTR-ND Nuevo y original
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