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| PartNumber | 2N6990 | 2N6990/TR | 2N6990JANTX |
| Description | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT | Quad Switching - Bulk (Alt: JANTX2N6990) |
| Manufacturer | Microchip | Microchip | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | N | N | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | SMD/SMT | - |
| Package / Case | TO-116-14 | TO-86-14 | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Quad | Quad | - |
| Collector Emitter Voltage VCEO Max | 50 V | 50 V | - |
| Collector Base Voltage VCBO | 75 V | 75 V | - |
| Emitter Base Voltage VEBO | 6 V | 6 V | - |
| Collector Emitter Saturation Voltage | 300 mV | 1 V | - |
| Maximum DC Collector Current | 800 mA | 800 mA | - |
| Minimum Operating Temperature | - 65 C | - 65 C | - |
| Maximum Operating Temperature | + 200 C | + 200 C | - |
| DC Current Gain hFE Max | 325 at 1 mA, 10 VDC | 325 at 1 mA, 10 V | - |
| Packaging | Tray | Reel | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | - |
| DC Collector/Base Gain hfe Min | 75 at 1 mA, 10 VDC | 50 at 1 mA, 10 V | - |
| Pd Power Dissipation | 1.5 W | 1 W | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 1 | 100 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.014110 oz | - | - |