2N660

2N660 vs 2N6600 vs 2N6602

 
PartNumber2N6602N66002N6602
Description
ManufacturerON--
Product CategoryTransistors (BJT) - Single--
Series---
PackagingTray--
Part StatusObsolete--
Transistor TypePNP--
Current Collector (Ic) (Max)16A--
Voltage Collector Emitter Breakdown (Max)140V--
Vce Saturation (Max) @ Ib, Ic4V @ 3.2A, 16A--
Current Collector Cutoff (Max)10mA--
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 8A, 4V--
Power Max150W--
Frequency Transition---
Operating Temperature-65°C ~ 200°C (TJ)--
Mounting TypeThrough Hole--
Package / CaseTO-204AA, TO-3--
Supplier Device PackageTO-204--
Base Part Number2N6609--
Fabricante Parte # Descripción RFQ
Central Semiconductor
Central Semiconductor
2N6609 Bipolar Transistors - BJT 160Vcbo 140Vceo 160Vceb 7.0Vebo 16A
2N660 Nuevo y original
2N6600 Nuevo y original
2N6602 Nuevo y original
2N6605A Nuevo y original
2N6609A Nuevo y original
2N6609G Nuevo y original
2N6609G. Nuevo y original
Central Semiconductor
Central Semiconductor
2N6609 TRANS PNP 140V 16A TO-204
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