PartNumber | 2N6431 | 2N6432 | 2N6430 |
Description | Bipolar Transistors - BJT NPN High Voltage | Bipolar Transistors - BJT 200Vcbo 200Vceo 6.0Vebo 100mA 500mW | Bipolar Transistors - BJT . . |
Manufacturer | Central Semiconductor | Central Semiconductor | Central Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-18 | TO-18 | TO-18 |
Transistor Polarity | NPN | PNP | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | 300 V | 200 V | - |
Collector Base Voltage VCBO | 300 V | 200 V | - |
Emitter Base Voltage VEBO | 6 V | 5 V | - |
Collector Emitter Saturation Voltage | 0.5 V | 0.5 V | - |
Maximum DC Collector Current | 0.1 A | - | - |
Gain Bandwidth Product fT | 50 MHz | 50 MHz | - |
Minimum Operating Temperature | - 65 C | - 65 C | - |
Maximum Operating Temperature | + 150 C | + 200 C | - |
Series | 2N6431 | - | 2N6430 |
Height | 5.33 mm | - | - |
Length | 5.84 mm | - | - |
Packaging | Bulk | Bulk | Bulk |
Width | 5.84 mm | - | - |
Brand | Central Semiconductor | Central Semiconductor | Central Semiconductor |
Continuous Collector Current | 0.45 A | 100 mA | - |
DC Collector/Base Gain hfe Min | 25 | 25 at 1 mA, 10 V | - |
Pd Power Dissipation | 500 mW | 500 mW | - |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 2000 | 2000 | 2000 |
Subcategory | Transistors | Transistors | Transistors |
Part # Aliases | 2N6431 PBFREE | 2N6432 PBFREE | 2N6430 PBFREE |
Unit Weight | 0.011020 oz | - | - |
Technology | - | Si | - |