PartNumber | 2N6109G | 2N6109G,2N6109 | 2N610926 |
Description | Bipolar Transistors - BJT 7A 50V 40W PNP | ||
Manufacturer | ON Semiconductor | - | - |
Product Category | Bipolar Transistors - BJT | - | - |
RoHS | Y | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-220-3 | - | - |
Transistor Polarity | PNP | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 50 V | - | - |
Collector Base Voltage VCBO | 60 V | - | - |
Emitter Base Voltage VEBO | 5 V | - | - |
Collector Emitter Saturation Voltage | 3.5 V | - | - |
Maximum DC Collector Current | 7 A | - | - |
Gain Bandwidth Product fT | 10 MHz | - | - |
Minimum Operating Temperature | - 65 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Series | 2N6109 | - | - |
Height | 15.75 mm | - | - |
Length | 10.53 mm | - | - |
Packaging | Tube | - | - |
Width | 4.83 mm | - | - |
Brand | ON Semiconductor | - | - |
Continuous Collector Current | 7 A | - | - |
DC Collector/Base Gain hfe Min | 30 | - | - |
Pd Power Dissipation | 40 W | - | - |
Product Type | BJTs - Bipolar Transistors | - | - |
Factory Pack Quantity | 50 | - | - |
Subcategory | Transistors | - | - |
Unit Weight | 0.211644 oz | - | - |