 | |  | |
| PartNumber | 2N5786 | 2N5786 PBFREE | 2N5786SMD |
| Description | Bipolar Transistors - BJT NPN Ampl/Switch | Bipolar Transistors - BJT 45Vcbo 40Vceo 3.5Vebo 2.0V | |
| Manufacturer | Central Semiconductor | Central Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | T | Y | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-39-3 | TO-39-3 | - |
| Transistor Polarity | NPN | NPN | - |
| Collector Emitter Voltage VCEO Max | 40 V | 40 V | - |
| Collector Base Voltage VCBO | 45 V | 45 V | - |
| Emitter Base Voltage VEBO | 3.5 V | 3.5 V | - |
| Collector Emitter Saturation Voltage | 1 V | 1 V | - |
| Maximum DC Collector Current | 3.5 A | - | - |
| Gain Bandwidth Product fT | 4 MHz | 1 MHz | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 200 C | - | - |
| Series | 2N5786 | 2N57 | - |
| DC Current Gain hFE Max | 120 | 150 at 1.6 A, 2 V | - |
| Packaging | Bulk | Bulk | - |
| Brand | Central Semiconductor | Central Semiconductor | - |
| DC Collector/Base Gain hfe Min | 4 at 1.6 A, 2 V | 20 at 1.6 A, 2 V | - |
| Pd Power Dissipation | 10000 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 500 | 500 | - |
| Subcategory | Transistors | Transistors | - |
| Part # Aliases | 2N5786 TIN/LEAD | - | - |
| Technology | - | Si | - |
| Configuration | - | Single | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Central Semiconductor |
2N5786 | Bipolar Transistors - BJT NPN Ampl/Switch | |
| 2N5786 PBFREE | Bipolar Transistors - BJT 45Vcbo 40Vceo 3.5Vebo 2.0V | ||
| 2N5786SMD | Nuevo y original | ||
| 2N5786UTX | Nuevo y original | ||
| 2N5786UTXV | Nuevo y original | ||
Microchip / Microsemi |
2N5786 | Bipolar Transistors - BJT NPN Ampl/Switch |