2N5551Z stock, 2N5551Z, 2N5551ZL1

2N5551ZL1 vs 2N5551ZL1G


PartNumber	2N5551ZL1	2N5551ZL1G
Description	Bipolar Transistors - BJT 600mA 180V NPN	Bipolar Transistors - BJT 600mA 180V NPN
Manufacturer	ON Semiconductor	ON Semiconductor
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT
RoHS	N	Y
Mounting Style	Through Hole	Through Hole
Package / Case	TO-92-3	TO-92-3
Transistor Polarity	NPN	NPN
Configuration	Single	Single
Collector Emitter Voltage VCEO Max	160 V	160 V
Collector Base Voltage VCBO	180 V	180 V
Emitter Base Voltage VEBO	6 V	6 V
Collector Emitter Saturation Voltage	0.25 V	0.25 V
Maximum DC Collector Current	0.6 A	0.6 A
Gain Bandwidth Product fT	300 MHz	300 MHz
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C
Height	5.33 mm	5.33 mm
Length	5.2 mm	5.2 mm
Packaging	Ammo Pack	Ammo Pack
Width	4.19 mm	4.19 mm
Brand	ON Semiconductor	ON Semiconductor
Continuous Collector Current	0.6 A	0.6 A
DC Collector/Base Gain hfe Min	80	80
Pd Power Dissipation	625 mW	625 mW
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors
Factory Pack Quantity	2000	2000
Subcategory	Transistors	Transistors
Series	-	2N5551

Search Part Number : "2N5551Z", Match & Start with "2N5551Z" - Total : 4

Fabricante	Parte #	Descripción
ON Semiconductor	2N5551ZL1	Bipolar Transistors - BJT 600mA 180V NPN
	2N5551ZL1G	Bipolar Transistors - BJT 600mA 180V NPN
	2N5551ZL1	TRANS NPN 160V 0.6A TO-92
	2N5551ZL1G	TRANS NPN 160V 0.6A TO-92