 |  | | |
| PartNumber | 2N5551TA | 2N5551TA. | 2N5551TAP |
| Description | Bipolar Transistors - BJT NPN Transistor General Purpose | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-92-3 Kinked Lead | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 160 V | - | - |
| Collector Base Voltage VCBO | 180 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 0.2 V | - | - |
| Maximum DC Collector Current | 0.6 A | - | - |
| Gain Bandwidth Product fT | 300 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | 2N5551 | - | - |
| DC Current Gain hFE Max | 250 | - | - |
| Height | 4.7 mm | - | - |
| Length | 4.7 mm | - | - |
| Packaging | Ammo Pack | - | - |
| Width | 3.93 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Continuous Collector Current | 0.6 A | - | - |
| DC Collector/Base Gain hfe Min | 80 | - | - |
| Pd Power Dissipation | 625 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.008466 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
2N5551TA | Bipolar Transistors - BJT NPN Transistor General Purpose | |
| 2N5551TAR | Bipolar Transistors - BJT NPN Transistor General Purpose | ||
| 2N5551TA. | Nuevo y original | ||
| 2N5551TAP | Nuevo y original | ||
| 2N5551TAR_Q | Bipolar Transistors - BJT NPN Transistor General Purpose | ||
ON Semiconductor |
2N5551TAR | TRANS NPN 160V 0.6A TO-92 | |
| 2N5551TA | TRANS NPN 160V 0.6A TO-92 |