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2N5459

2N5459 PBFREE vs 2N5459 vs 2N5459_D27Z

 
PartNumber2N5459 PBFREE2N54592N5459_D27Z
DescriptionJFET N-Ch 25Vds 25Vdg 25Vgs 10mA 210mWJFET N-Ch 25Vds 25Vdg Engineering HoldJFET N-CH 25V 625MW TO92
ManufacturerCentral SemiconductorCentral SemiconductorFairchild Semiconductor
Product CategoryJFETJFETJFETs (Junction Field Effect)
RoHSYN-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-92-3TO-92-3-
Transistor PolarityN-ChannelN-Channel-
ConfigurationSingleSingle-
Vds Drain Source Breakdown Voltage25 V25 V-
Vgs Gate Source Breakdown Voltage25 V25 V-
Drain Source Current at Vgs=016 mA16 mA-
Pd Power Dissipation310 mW310 mW-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Series2N54592N5459-
PackagingBulkBulkTape & Reel (TR)
BrandCentral SemiconductorCentral Semiconductor-
Forward Transconductance Min2000 us2000 us-
Gate Source Cutoff Voltage8 V8 V-
Maximum Drain Gate Voltage25 V25 V-
Product TypeJFETsJFETs-
Factory Pack Quantity25002500-
SubcategoryTransistorsTransistors-
Package Case--TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type--Through Hole
Supplier Device Package--TO-92-3
FET Type--N-Channel
Power Max--625mW
Voltage Breakdown V BRGSS--25V
Drain to Source Voltage Vdss---
Current Drain Idss Vds Vgs=0--4mA @ 15V
Current Drain Id Max---
Voltage Cutoff VGS off Id--2V @ 10nA
Input Capacitance Ciss Vds--7pF @ 15V
Resistance RDS On---
Fabricante Parte # Descripción RFQ
Central Semiconductor
Central Semiconductor 		2N5459 PBFREE JFET N-Ch 25Vds 25Vdg 25Vgs 10mA 210mW
2N5459 JFET N-Ch 25Vds 25Vdg Engineering Hold
ON Semiconductor
ON Semiconductor 		2N5459 JFET N-CH 25V 625MW TO92
2N5459_D27Z JFET N-CH 25V 625MW TO92
2N5459_D74Z JFET N-CH 25V 625MW TO92
2N5459_D75Z JFET N-CH 25V 625MW TO92
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