 |  | | |
| PartNumber | 2N5416U4 | 2N5416U4JAN | 2N5416U4JANTX |
| Description | Bipolar Transistors - BJT | Trans GP BJT PNP 300V 1A 3-Pin SMD Tray - Trays (Alt: JAN2N5416U4) | Trans GP BJT PNP 300V 1A 3-Pin SMD Tray - Trays (Alt: JANTX2N5416U4) |
| Manufacturer | Microchip | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | N | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SMD-0.22-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 80 V | - | - |
| Collector Base Voltage VCBO | 350 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 2 V | - | - |
| Maximum DC Collector Current | 1 A | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 200 C | - | - |
| DC Current Gain hFE Max | 120 at 50 mA, 10 V | - | - |
| Packaging | Tray | - | - |
| Brand | Microchip / Microsemi | - | - |
| DC Collector/Base Gain hfe Min | 15 at 1 mA, 10 V | - | - |
| Pd Power Dissipation | 1 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 1 | - | - |
| Subcategory | Transistors | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Microchip / Microsemi |
2N5416U4 | Bipolar Transistors - BJT | |
| 2N5416U4 | Bipolar Transistors - BJT | ||
| 2N5416U4JAN | Trans GP BJT PNP 300V 1A 3-Pin SMD Tray - Trays (Alt: JAN2N5416U4) | ||
| 2N5416U4JANTX | Trans GP BJT PNP 300V 1A 3-Pin SMD Tray - Trays (Alt: JANTX2N5416U4) |