PartNumber | 2N5210 | 2N5210BU | 2N5210NMBU |
Description | Bipolar Transistors - BJT NPN Gen Pur SS | Bipolar Transistors - BJT NPN Transistor General Purpose | Bipolar Transistors - BJT NPN Transistor General Purpose |
Manufacturer | Central Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-92-3 | TO-92-3 | TO-92-3 |
Transistor Polarity | NPN | NPN | NPN |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 50 V | 50 V | 50 V |
Collector Base Voltage VCBO | 50 V | 50 V | 50 V |
Emitter Base Voltage VEBO | 4.5 V | 4.5 V | 4.5 V |
Collector Emitter Saturation Voltage | 700 mV | 0.7 V | 0.7 V |
Maximum DC Collector Current | 50 mA | 0.1 A | 0.1 A |
Gain Bandwidth Product fT | 30 MHz | 30 MHz | 30 MHz |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Series | 2N5210 | 2N5210 | - |
Height | 5.33 mm | 4.7 mm | 4.58 mm |
Length | 5.21 mm | 4.7 mm | 4.58 mm |
Packaging | Bulk | - | Bulk |
Width | 4.19 mm | 3.93 mm | 3.86 mm |
Brand | Central Semiconductor | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Continuous Collector Current | 0.1 A | 0.1 A | 0.1 A |
DC Collector/Base Gain hfe Min | 200 at 100 uA, 5 V | 200 | 200 |
Pd Power Dissipation | 350 mW | 625 mW | 625 mW |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 2500 | 10000 | 1000 |
Subcategory | Transistors | Transistors | Transistors |
Part # Aliases | 2N5210 PBFREE | - | - |
Unit Weight | 0.016000 oz | 0.006314 oz | 0.008466 oz |
Minimum Operating Temperature | - | - 55 C | - 55 C |
DC Current Gain hFE Max | - | 600 | 600 |