2N5195 stock, 2N5195, 2N5195G


PartNumber	2N5195G	2N5195 SL H	2N5195
Description	Bipolar Transistors - BJT 4A 80V 40W PNP	Bipolar Transistors - BJT PNP 80Vcbo 80Vceo 5.0V 4A 40W	Trans GP BJT PNP 80V 4A 3-Pin(3+Tab) SOT-32 Tube
Manufacturer	ON Semiconductor	Central Semiconductor	-
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	-
RoHS	Y	Y	-
Mounting Style	Through Hole	-	-
Package / Case	TO-225-3	-	-
Transistor Polarity	PNP	-	-
Configuration	Single	-	-
Collector Emitter Voltage VCEO Max	80 V	-	-
Collector Base Voltage VCBO	80 V	-	-
Emitter Base Voltage VEBO	5 V	-	-
Collector Emitter Saturation Voltage	1.4 V	-	-
Maximum DC Collector Current	4 A	-	-
Gain Bandwidth Product fT	2 MHz	-	-
Minimum Operating Temperature	- 65 C	-	-
Maximum Operating Temperature	+ 150 C	-	-
Series	2N5195	2N519	-
Height	11.04 mm	-	-
Length	7.74 mm	-	-
Packaging	Bulk	Bulk	-
Width	2.66 mm	-	-
Brand	ON Semiconductor	Central Semiconductor	-
Continuous Collector Current	4 A	-	-
DC Collector/Base Gain hfe Min	20	-	-
Pd Power Dissipation	40 W	-	-
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	-
Factory Pack Quantity	500	50	-
Subcategory	Transistors	Transistors	-
Unit Weight	0.023986 oz	-	-

Search Part Number : "2N5195", Match & Start with "2N5195" - Total : 6

Fabricante	Parte #	Descripción
	2N5195G	Bipolar Transistors - BJT 4A 80V 40W PNP
	2N5195G.	Transistor Polarity:PNP, Collector Emitter Voltage V(br)ceo:-80V, Transition Frequency ft:2MHz, Power Dissipation Pd:40W, DC Collector Current:-4A, DC Current Gain hFE:80hFE, No. of Pins:3Pins,
Central Semiconductor	2N5195 SL H	Bipolar Transistors - BJT PNP 80Vcbo 80Vceo 5.0V 4A 40W
STMicroelectronics	2N5195	Trans GP BJT PNP 80V 4A 3-Pin(3+Tab) SOT-32 Tube
Central Semiconductor	2N5195 SL H	TRANS PNP 80V 4A TO126
ON Semiconductor	2N5195G	Bipolar Transistors - BJT 4A 80V 40W PNP

2N5195