| PartNumber | 2N3637 | 2N3637L | 2N3637/TR |
| Description | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | N | N | N |
| Technology | Si | - | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-39-3 | TO-39-3 | TO-205AD-3 |
| Transistor Polarity | PNP | - | PNP |
| Configuration | Single | - | Single |
| Collector Emitter Voltage VCEO Max | 175 V | - | 175 V |
| Collector Base Voltage VCBO | 175 V | - | 175 V |
| Emitter Base Voltage VEBO | 5 V | - | 5 V |
| Collector Emitter Saturation Voltage | 300 mV | - | 0.3 V |
| Maximum DC Collector Current | 1 A | - | 1 A |
| Minimum Operating Temperature | - 65 C | - | - 65 C |
| Maximum Operating Temperature | + 200 C | - | + 200 C |
| DC Current Gain hFE Max | 150 at 50 mA, 10 VDC | - | 300 at - 50 mA, - 10 V |
| Packaging | Bulk | Tray | Reel |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| DC Collector/Base Gain hfe Min | 50 at 50 mA, 10 VDC | - | 55 at 100 uA, 10 V |
| Pd Power Dissipation | 1 W | - | 5 W |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1 | 1 | 100 |
| Subcategory | Transistors | Transistors | Transistors |