PartNumber | 2N3439UA | 2N3439U4 | 2N3439UA/TR |
Description | Bipolar Transistors - BJT NPN Transistor | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | N | N | N |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | SMD-4 | - | LCC-4 |
Packaging | Waffle | Tray | Reel |
Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 1 | 1 | 100 |
Subcategory | Transistors | Transistors | Transistors |
Technology | - | - | Si |
Transistor Polarity | - | - | NPN |
Configuration | - | - | Single |
Collector Emitter Voltage VCEO Max | - | - | 350 V |
Collector Base Voltage VCBO | - | - | 450 V |
Emitter Base Voltage VEBO | - | - | 7 V |
Collector Emitter Saturation Voltage | - | - | 0.5 V |
Maximum DC Collector Current | - | - | 1 A |
Minimum Operating Temperature | - | - | - 65 C |
Maximum Operating Temperature | - | - | + 200 C |
DC Current Gain hFE Max | - | - | 160 at 20 mA, 10 V |
DC Collector/Base Gain hfe Min | - | - | 10 at 200 mA, 10 V |
Pd Power Dissipation | - | - | 800 mW |