2N313

2N3134 vs 2N3135 vs 2N3136

 
PartNumber2N31342N31352N3136
DescriptionBipolar Transistors - BJT 50Vcbo 35Vceo 4.0Vebo 150mA 10pFTantalum Capacitors - Polymer SMD 16V 47uF 2917 20% ESR=70mOhmsBipolar Junction Transistor, PNP Type, TO-18
ManufacturerCentral Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-39-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Base Voltage VCBO50 V--
Emitter Base Voltage VEBO4 V--
Collector Emitter Saturation Voltage0.6 V--
Gain Bandwidth Product fT200 MHz--
Series2N3134--
DC Current Gain hFE Max300--
PackagingBulk--
BrandCentral Semiconductor--
DC Collector/Base Gain hfe Min100--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity200--
SubcategoryTransistors--
Fabricante Parte # Descripción RFQ
Central Semiconductor
Central Semiconductor
2N3134 Bipolar Transistors - BJT 50Vcbo 35Vceo 4.0Vebo 150mA 10pF
2N3134 Bipolar Transistors - BJT 50Vcbo 35Vceo 4.0Vebo 150mA 10pF
2N3135 Tantalum Capacitors - Polymer SMD 16V 47uF 2917 20% ESR=70mOhms
2N3136 Bipolar Junction Transistor, PNP Type, TO-18
2N3137 Tantalum Capacitors - Polymer SMD 10V 330uF 2917 20% ESR=40mOhms
2N3137T Nuevo y original
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