| PartNumber | 2N2905 | 2N2905A | 2N2905A/TR |
| Description | Bipolar Transistors - BJT PNP 60Vcbo 40Vceo 5.0Vebo 0.6A 0.8W | Bipolar Transistors - BJT PNP Gen Pur SS | Bipolar Transistors - BJT |
| Manufacturer | Central Semiconductor | Central Semiconductor | Microchip |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y | N |
| Technology | Si | - | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-39-3 | TO-39-3 | TO-205AD-3 |
| Transistor Polarity | PNP | PNP | PNP |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 40 V | 60 V | 60 V |
| Collector Base Voltage VCBO | 60 V | 60 V | 60 V |
| Emitter Base Voltage VEBO | 5 V | 5 V | 5 V |
| Collector Emitter Saturation Voltage | 1.6 V | 1.6 V | 0.4 V |
| Gain Bandwidth Product fT | 200 MHz | 200 MHz | - |
| Minimum Operating Temperature | - 65 C | - 65 C | - 65 C |
| Maximum Operating Temperature | + 200 C | + 150 C | + 200 C |
| Packaging | Bulk | Bulk | Reel |
| Brand | Central Semiconductor | Central Semiconductor | Microchip / Microsemi |
| Continuous Collector Current | 0.6 A | 0.45 A | - |
| DC Collector/Base Gain hfe Min | 35 at 100 uA, 10 V | 75 | 50 at 500 mA, 10 V |
| Pd Power Dissipation | 800 mW | 600 mW | 3 W |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 500 | 500 | 100 |
| Subcategory | Transistors | Transistors | Transistors |
| Part # Aliases | 2N2905 PBFREE | 2N2905A PBFREE | - |
| Unit Weight | 0.035486 oz | 0.032805 oz | - |
| Maximum DC Collector Current | - | 0.6 A | 600 mA |
| Series | - | 2N2905 | - |
| Height | - | 6.6 mm | - |
| Length | - | 9.4 mm | - |
| Width | - | 9.4 mm | - |
| DC Current Gain hFE Max | - | - | 450 at 1 mA, 10 V |