2DA1213O

2DA1213O-13 vs 2DA1213O vs 2DA1213O-7

 
PartNumber2DA1213O-132DA1213O2DA1213O-7
DescriptionBipolar Transistors - BJT 1W -50V
ManufacturerDiodes IncorporatedD-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-89-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 50 V--
Collector Base Voltage VCBO- 50 V--
Emitter Base Voltage VEBO- 5 V--
Collector Emitter Saturation Voltage- 0.5 V--
Maximum DC Collector Current- 2 A--
Gain Bandwidth Product fT160 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Series2DA12--
DC Current Gain hFE Max140 at 500 mA, 2 V--
Height1.5 mm--
Length4.5 mm--
PackagingReel--
Width2.5 mm--
BrandDiodes Incorporated--
Continuous Collector Current- 2 A--
DC Collector/Base Gain hfe Min70--
Pd Power Dissipation1000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
Unit Weight0.004603 oz--
Fabricante Parte # Descripción RFQ
Diodes Incorporated
Diodes Incorporated
2DA1213O-13 Bipolar Transistors - BJT 1W -50V
2DA1213O-13 Bipolar Transistors - BJT 1W -50V
2DA1213O Nuevo y original
2DA1213O-7 Nuevo y original
Top