1N5811T

1N5811TR vs 1N5811TX

 
PartNumber1N5811TR1N5811TX
DescriptionDIODE GEN PURP 150V 6A AXIAL
ManufacturerMicrosemi Corporation-
Product CategoryDiodes, Rectifiers - Single-
Series--
PackagingCut Tape (CT) Alternate Packaging-
Package CaseB, Axial-
Mounting TypeThrough Hole-
Supplier Device Package--
SpeedFast Recovery = 200mA (Io)-
Diode TypeStandard-
Current Reverse Leakage Vr5μA @ 150V-
Voltage Forward Vf Max If875mV @ 4A-
Voltage DC Reverse Vr Max150V-
Current Average Rectified Io6A-
Reverse Recovery Time trr30ns-
Capacitance Vr F--
Operating Temperature Junction-65°C ~ 175°C-
Fabricante Parte # Descripción RFQ
Microchip / Microsemi
Microchip / Microsemi
1N5811TR DIODE GEN PURP 150V 6A AXIAL
1N5811TX Nuevo y original
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