ZXTN25020BFHTA vs ZXTN25020BFH vs ZXTN25020CFH

 
PartNumberZXTN25020BFHTAZXTN25020BFHZXTN25020CFH
DescriptionBipolar Transistors - BJT NPN 20V 4.5A 3-PINTRANS NPN 20V 4.5A SOT23-3
ManufacturerDiodes IncorporatedDiodes IncorporatedSON/DIODES
Product CategoryBipolar Transistors - BJTTransistors (BJT) - SingleTransistors (BJT) - Single
RoHSY--
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-23-3--
Transistor PolarityNPNNPNNPN
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max20 V--
Collector Base Voltage VCBO50 V--
Emitter Base Voltage VEBO7 V--
Maximum DC Collector Current4.5 A4.5 A4.5 A
Gain Bandwidth Product fT185 MHz185 MHz185 MHz
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesZXTN250ZXTN250ZXTN250
Height1 mm--
Length3.05 mm--
PackagingReelDigi-ReelR Alternate PackagingReel
Width1.4 mm--
BrandDiodes Incorporated--
Pd Power Dissipation1810 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz0.000282 oz0.000282 oz
Package Case-TO-236-3, SC-59, SOT-23-3SOT-23-3
Mounting Type-Surface Mount-
Supplier Device Package-SOT-23-3-
Power Max-1.25W-
Transistor Type-NPN-
Current Collector Ic Max-4.5A-
Voltage Collector Emitter Breakdown Max-20V-
DC Current Gain hFE Min Ic Vce-100 @ 10mA, 2V-
Vce Saturation Max Ib Ic-145mV @ 450mA, 4.5A-
Current Collector Cutoff Max-50nA (ICBO)-
Frequency Transition-185MHz-
Pd Power Dissipation-1810 mW1810 mW
Collector Emitter Voltage VCEO Max-20 V20 V
Collector Base Voltage VCBO-50 V70 V
Emitter Base Voltage VEBO-7 V7 V
DC Collector Base Gain hfe Min-100 at 10 mA at 2 V 100 at 1 A at 2 V 75 at 4.5 A at 2 V 30 at 10 A at 2 V200 at 10 mA at 2 V 180 at 1 A at 2 V 90 at 4.5 A at 2 V 25 at 10 A at 2 V
DC Current Gain hFE Max-100 at 10 mA at 2 V200 at 10 mA at 2 V
Collector Emitter Saturation Voltage--175 mV
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