ZXT10N15DE6TA vs ZXT10N20DE6TA vs ZXT10N15DE6

 
PartNumberZXT10N15DE6TAZXT10N20DE6TAZXT10N15DE6
DescriptionBipolar Transistors - BJT 15V NPN SuperSOT4Bipolar Transistors - BJT 20V NPN SuperSOT4
ManufacturerDiodes IncorporatedDiodes IncorporatedZ
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors (BJT) - Single
RoHSYY-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-6SOT-23-6-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max15 V20 V-
Collector Base Voltage VCBO15 V20 V-
Emitter Base Voltage VEBO5 V5 V-
Collector Emitter Saturation Voltage230 mV190 mV-
Maximum DC Collector Current4 A3.5 A-
Gain Bandwidth Product fT120 MHz140 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesZXT10ZXT10-
DC Current Gain hFE Max200 at 10 mA, 2 V--
Height1.3 mm1.3 mm-
Length3.1 mm3.1 mm-
PackagingReelReel-
Width1.8 mm1.8 mm-
BrandDiodes IncorporatedDiodes Incorporated-
Continuous Collector Current4 A3.5 A-
DC Collector/Base Gain hfe Min200 at 10 mA, 2 V, 300 at 200 mA, 2 V, 200 at 3 A, 2 V, 150 at 5 A, 2 V--
Pd Power Dissipation1.1 W1.1 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Unit Weight0.000229 oz0.000229 oz-
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