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| PartNumber | ZVN4525 | ZVN4525E6 | ZVN4525E6-7 |
| Description | |||
| Manufacturer | - | Diodes Incorporated | - |
| Product Category | - | FETs - Single | - |
| Series | - | ZVN4525 | - |
| Packaging | - | Cut Tape (CT) Alternate Packaging | - |
| Unit Weight | - | 0.000529 oz | - |
| Mounting Style | - | SMD/SMT | - |
| Package Case | - | SOT-23-6 | - |
| Technology | - | Si | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Number of Channels | - | 1 Channel | - |
| Supplier Device Package | - | SOT-23-6 | - |
| Configuration | - | Single Quad Drain | - |
| FET Type | - | MOSFET N-Channel, Metal Oxide | - |
| Power Max | - | 1.1W | - |
| Transistor Type | - | 1 N-Channel | - |
| Drain to Source Voltage Vdss | - | 250V | - |
| Input Capacitance Ciss Vds | - | 72pF @ 25V | - |
| FET Feature | - | Standard | - |
| Current Continuous Drain Id 25°C | - | 230mA (Ta) | - |
| Rds On Max Id Vgs | - | 8.5 Ohm @ 500mA, 10V | - |
| Vgs th Max Id | - | 1.8V @ 1mA | - |
| Gate Charge Qg Vgs | - | 3.65nC @ 10V | - |
| Pd Power Dissipation | - | 1.1 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 1.7 ns | - |
| Rise Time | - | 1.7 ns | - |
| Vgs Gate Source Voltage | - | 40 V | - |
| Id Continuous Drain Current | - | 230 mA | - |
| Vds Drain Source Breakdown Voltage | - | 250 V | - |
| Rds On Drain Source Resistance | - | 9.5 Ohms | - |
| Transistor Polarity | - | N-Channel | - |
| Typical Turn Off Delay Time | - | 11.4 ns | - |
| Typical Turn On Delay Time | - | 1.25 ns | - |
| Channel Mode | - | Enhancement | - |