ZVN4424ASTOA vs ZVN4424 vs ZVN4424A

 
PartNumberZVN4424ASTOAZVN4424ZVN4424A
DescriptionMOSFET N-Chnl 240VTrans MOSFET N-CH 240V 0.26A Automotive 3-Pin E-Line
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-92-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage240 V--
Id Continuous Drain Current260 mA--
Rds On Drain Source Resistance6 Ohms--
Vgs Gate Source Voltage40 V--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation750 mW--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingBulkBulk-
ProductMOSFET Small Signal--
Transistor Type1 N-Channel1 N-Channel-
TypeFET--
BrandDiodes Incorporated--
Fall Time5 ns5 ns-
Product TypeMOSFET--
Rise Time5 ns5 ns-
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time40 ns40 ns-
Typical Turn On Delay Time2.5 ns2.5 ns-
Unit Weight0.016000 oz0.016000 oz-
Series-ZVN4424-
Package Case-TO-226-3, TO-92-3 (TO-226AA)-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Through Hole-
Supplier Device Package-TO-92-3-
FET Type-MOSFET N-Channel, Metal Oxide-
Power Max-750mW-
Drain to Source Voltage Vdss-240V-
Input Capacitance Ciss Vds-200pF @ 25V-
FET Feature-Standard-
Current Continuous Drain Id 25°C-260mA (Ta)-
Rds On Max Id Vgs-5.5 Ohm @ 500mA, 10V-
Vgs th Max Id-1.8V @ 1mA-
Gate Charge Qg Vgs---
Pd Power Dissipation-750 mW-
Vgs Gate Source Voltage-40 V-
Id Continuous Drain Current-260 mA-
Vds Drain Source Breakdown Voltage-240 V-
Rds On Drain Source Resistance-6 Ohms-
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