ZTX689BSTZ vs ZTX689BSTOB vs ZTX689BSTOA

 
PartNumberZTX689BSTZZTX689BSTOBZTX689BSTOA
DescriptionBipolar Transistors - BJT NPN Super E-LineBipolar Transistors - BJT NPN Super E-LineBipolar Transistors - BJT NPN Super E-Line
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTBipolar Transistors - BJT
RoHSYYY
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-92-3TO-92-3TO-92-3
Transistor PolarityNPNNPNNPN
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max20 V20 V20 V
Collector Base Voltage VCBO20 V20 V20 V
Emitter Base Voltage VEBO5 V5 V5 V
Collector Emitter Saturation Voltage0.5 V0.5 V0.5 V
Maximum DC Collector Current3 A3 A3 A
Gain Bandwidth Product fT150 MHz150 MHz150 MHz
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesZTX689--
Height4.01 mm4.01 mm4.01 mm
Length4.77 mm4.77 mm4.77 mm
PackagingBulkBulkBulk
Width2.41 mm2.41 mm2.41 mm
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Continuous Collector Current3 A3 A3 A
DC Collector/Base Gain hfe Min400--
Pd Power Dissipation1 W1 W1 W
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
Factory Pack Quantity200040004000
SubcategoryTransistorsTransistorsTransistors
Unit Weight0.016000 oz0.016000 oz0.016000 oz
DC Current Gain hFE Max-500 at 100 mA, 2 V500 at 100 mA, 2 V
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