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| PartNumber | UMG4NTR | UMG4N-7 | UMG4N |
| Description | Bipolar Transistors - Pre-Biased DUAL NPN 50V 100MA SOT-353 | Bipolar Transistors - Pre-Biased 150mW 100mA | |
| Manufacturer | ROHM Semiconductor | Diodes Incorporated | - |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | - |
| RoHS | Y | Y | - |
| Configuration | Dual Common Emitter | Dual Common Emitter | - |
| Transistor Polarity | NPN | NPN | - |
| Typical Input Resistor | 10 kOhms | 10 kOhms | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | UMT-5 | SOT-353-5 | - |
| DC Collector/Base Gain hfe Min | 100 | 100 | - |
| Collector Emitter Voltage VCEO Max | 50 V | 50 V | - |
| Continuous Collector Current | 100 mA | 100 mA | - |
| Peak DC Collector Current | 100 mA | 100 mA | - |
| Pd Power Dissipation | 150 mW | - | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | UMG4N | UMG4N | - |
| Packaging | Reel | Reel | - |
| DC Current Gain hFE Max | 600 | 600 | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Height | 0.77 mm | 1 mm | - |
| Length | 2 mm | 2.2 mm | - |
| Width | 1.7 mm | 1.35 mm | - |
| Brand | ROHM Semiconductor | Diodes Incorporated | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | Transistors | Transistors | - |
| Part # Aliases | UMG4N | - | - |
| Unit Weight | 0.000282 oz | 0.000212 oz | - |
| Minimum Operating Temperature | - | - 55 C | - |