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| PartNumber | TSM80N950CP ROG | TSM80N950CH C5G | TSM80N950CI C0G |
| Description | MOSFET 800V Power MOSFET Superjunction N-chan | MOSFET 800V Power MOSFET Superjunction N-chan | MOSFET 800V, 6A, Single N- Channel Power MOSFET |
| Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | Through Hole | Through Hole |
| Package / Case | TO-252-3 | TO-251-3 | ITO-220-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 800 V | 800 V | 800 V |
| Id Continuous Drain Current | 6 A | 6 A | 6 A |
| Rds On Drain Source Resistance | 800 mOhms | 800 mOhms | 800 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 2 V |
| Vgs Gate Source Voltage | 10 V | 10 V | 10 V |
| Qg Gate Charge | 19.6 nC | 19.6 nC | 19.6 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 110 W | 110 W | 25 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Tube | Tube |
| Product | Rectifiers | Rectifiers | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
| Fall Time | 11 ns | 11 ns | 11 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 12 ns | 12 ns | 12 ns |
| Factory Pack Quantity | 2500 | 3750 | 2000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 57 ns | 57 ns | 57 ns |
| Typical Turn On Delay Time | 23 ns | 23 ns | 23 ns |
| Moisture Sensitive | - | - | Yes |
| Unit Weight | - | - | 0.063493 oz |