TSM60NB099PW C1G vs TSM60NB099CZ C0G vs TSM60NB099CF C0G


PartNumber	TSM60NB099PW C1G	TSM60NB099CZ C0G	TSM60NB099CF C0G
Description	MOSFET MOSFET, Single, N-Ch SJ G2, 600V, 38A	MOSFET MOSFET, Single, N-Ch SJ G2, 600V, 38A	MOSFET MOSFET, Single, N-Ch SJ G2, 600V, 38A
Manufacturer	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor
Product Category	MOSFET	MOSFET	MOSFET
RoHS	Y	Y	Y
Technology	Si	Si	Si
Number of Channels	1 Channel	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	600 V	600 V	600 V
Id Continuous Drain Current	38 A	38 A	38 A
Rds On Drain Source Resistance	86 mOhms	86 mOhms	81 mOhms
Vgs th Gate Source Threshold Voltage	2 V	2 V	2 V
Vgs Gate Source Voltage	10 V	10 V	10 V
Qg Gate Charge	62 nC	62 nC	62 nC
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Pd Power Dissipation	329 W	298 W	69 W
Configuration	Single	Single	Single
Channel Mode	Enhancement	Enhancement	Enhancement
Packaging	Tube	Tube	Tube
Transistor Type	N-Channel Power MOSFET	N-Channel Power MOSFET	N-Channel Power MOSFET
Brand	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor
Fall Time	25 ns	25 ns	21 ns
Product Type	MOSFET	MOSFET	MOSFET
Rise Time	24 ns	24 ns	21 ns
Factory Pack Quantity	500	2000	2000
Subcategory	MOSFETs	MOSFETs	MOSFETs
Typical Turn Off Delay Time	87 ns	87 ns	84 ns
Typical Turn On Delay Time	18 ns	18 ns	16 ns