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| PartNumber | TSM3N80CI C0G | TSM3N80CH C5G | TSM3N80CH |
| Description | MOSFET 800V 3A N Channel Power Mosfet | MOSFET 800V 3A N Channel Power Mosfet | |
| Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | TO-251-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 800 V | 800 V | - |
| Id Continuous Drain Current | 3 A | 3 A | - |
| Rds On Drain Source Resistance | 4.2 Ohms | 4.2 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 10 V | 10 V | - |
| Qg Gate Charge | 19 nC | 19 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 94 W | 94 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Tube | Tube | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Taiwan Semiconductor | Taiwan Semiconductor | - |
| Forward Transconductance Min | 3.7 S | 3.7 S | - |
| Fall Time | 41 ns | 41 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 36 ns | 36 ns | - |
| Factory Pack Quantity | 2000 | 3750 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 106 ns | 106 ns | - |
| Typical Turn On Delay Time | 48 ns | 48 ns | - |
| Unit Weight | 0.211644 oz | 0.012102 oz | - |