TSM3481CX6 RFG vs TSM3481CX6 vs TSM3481CX6 RF

 
PartNumberTSM3481CX6 RFGTSM3481CX6TSM3481CX6 RF
DescriptionMOSFET 30V P channel MosfetMOSFET 30V P channel MOSFET
ManufacturerTaiwan SemiconductorTaiwan Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-26-6SOT-26-6-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current5.7 A5.7 A-
Rds On Drain Source Resistance38 mOhms38 mOhms-
Vgs th Gate Source Threshold Voltage1 V1 V-
Vgs Gate Source Voltage10 V10 V-
Qg Gate Charge18.09 nC18.09 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.6 W1.6 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Transistor Type1 P-Channel1 P-Channel-
BrandTaiwan SemiconductorTaiwan Semiconductor-
Fall Time7.35 ns7.35 ns-
Product TypeMOSFETMOSFET-
Rise Time4.43 ns4.43 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time42.81 ns42.81 ns-
Typical Turn On Delay Time20.52 ns20.52 ns-
Unit Weight0.000529 oz--
Type-P-Channel-
Forward Transconductance Min-12 S-
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