TSM2302CX RFG vs TSM2302CX vs TSM2302CX RF

 
PartNumberTSM2302CX RFGTSM2302CXTSM2302CX RF
DescriptionMOSFET 20V N channel MOSFETMOSFET 20V N channel MOSFET
ManufacturerTaiwan SemiconductorGP/TSC-
Product CategoryMOSFETIC Chips-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current2.8 A--
Rds On Drain Source Resistance40 mOhms--
Vgs th Gate Source Threshold Voltage650 mV--
Vgs Gate Source Voltage4.5 V--
Qg Gate Charge5.4 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.25 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
ProductRectifiers--
Transistor Type1 N-Channel1 N-Channel-
BrandTaiwan Semiconductor--
Forward Transconductance Min10 S--
Fall Time10 ns7.56 ns-
Product TypeMOSFET--
Rise Time36 ns7.56 ns-
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time34 ns16.61 ns-
Typical Turn On Delay Time12 ns6.16 ns-
Part Aliases-RFG-
Unit Weight-0.050717 oz-
Package Case-SOT-23-3-
Pd Power Dissipation-900 mW-
Vgs Gate Source Voltage-8 V-
Id Continuous Drain Current-2.8 A-
Vds Drain Source Breakdown Voltage-20 V-
Vgs th Gate Source Threshold Voltage-0.95 V-
Rds On Drain Source Resistance-65 mOhms-
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