PartNumber | TSM200N03DPQ33 RGG | TSM2002 | TSM20N50CN |
Description | MOSFET MOSFET, Dual, N-Ch Trench, 30V, 20A | ||
Manufacturer | Taiwan Semiconductor | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | PDFN33-8 | - | - |
Number of Channels | 2 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 20 A | - | - |
Rds On Drain Source Resistance | 17 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 4.1 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 20 W | - | - |
Configuration | Dual | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Reel | - | - |
Transistor Type | Dual N-Channel PowerMOSFET | - | - |
Brand | Taiwan Semiconductor | - | - |
Forward Transconductance Min | 13 S | - | - |
Fall Time | 4.6 ns | - | - |
Moisture Sensitive | Yes | - | - |
Product Type | MOSFET | - | - |
Rise Time | 7.2 ns | - | - |
Factory Pack Quantity | 5000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 15.8 ns | - | - |
Typical Turn On Delay Time | 2.8 ns | - | - |