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| PartNumber | TSM1NB60CH C5G | TSM1NB60CP | TSM1NB60CH |
| Description | MOSFET 600V 1A N Channel Mosfet | MOSFET, N, 600V, 0.5A, D-PAK | |
| Manufacturer | Taiwan Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-251-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 1 A | - | - |
| Rds On Drain Source Resistance | 8 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 6.1 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 39 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Taiwan Semiconductor | - | - |
| Forward Transconductance Min | 0.8 S | - | - |
| Fall Time | 14.9 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 6.8 ns | - | - |
| Factory Pack Quantity | 3750 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 15.3 ns | - | - |
| Typical Turn On Delay Time | 7.7 ns | - | - |
| Unit Weight | 0.012102 oz | - | - |