TSM180N03CS RLG vs TSM180N03PQ33 RGG vs TSM180N03PQ33

 
PartNumberTSM180N03CS RLGTSM180N03PQ33 RGGTSM180N03PQ33
DescriptionMOSFET 30V N-Channel Power MOSFETMOSFET 30V N 25Amp 18mohm channel Mosfet
ManufacturerTaiwan SemiconductorTaiwan Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOP-8PDFN33-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current9 A25 A-
Rds On Drain Source Resistance16 mOhms14 mOhms-
Vgs th Gate Source Threshold Voltage1.2 V1.2 V-
Vgs Gate Source Voltage10 V10 V-
Qg Gate Charge4.1 nC4.1 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation2.5 W21 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Transistor Type1 N-Channel1 N-Channel-
BrandTaiwan SemiconductorTaiwan Semiconductor-
Fall Time4.6 ns4.6 ns-
Product TypeMOSFETMOSFET-
Rise Time7.2 ns7.2 ns-
Factory Pack Quantity25005000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time15.8 ns15.8 ns-
Typical Turn On Delay Time2.8 ns2.8 ns-
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