TPS1101D vs TPS1101DE4 vs TPS1101DG4

 
PartNumberTPS1101DTPS1101DE4TPS1101DG4
DescriptionMOSFET Single P-Ch Enh-Mode MOSFETMOSFET P-CH 15V 2.3A 8-SOIC
ManufacturerTexas Instruments--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOIC-8--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage15 V--
Id Continuous Drain Current2.3 A--
Rds On Drain Source Resistance90 mOhms--
Vgs Gate Source Voltage2 V, - 15 V--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 125 C--
Pd Power Dissipation791 mW--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height1.75 mm--
Length4.9 mm--
ProductMOSFET Small Signal--
SeriesTPS1101--
Transistor Type1 P-Channel--
TypePMOS Switches--
Width3.9 mm--
BrandTexas Instruments--
Fall Time5.5 ns--
Product TypeMOSFET--
Rise Time5.5 ns--
Factory Pack Quantity75--
SubcategoryMOSFETs--
Typical Turn Off Delay Time19 ns--
Typical Turn On Delay Time6.5 ns--
Unit Weight0.002677 oz--
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