TPS1100PW vs TPS1100PWG4 vs TPS1100PWP

 
PartNumberTPS1100PWTPS1100PWG4TPS1100PWP
DescriptionMOSFET Single P-Ch Enh-Mode MOSFETMOSFET Single P-Ch Enh-Mode MOSFET
ManufacturerTexas Instruments--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTSSOP-8--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage15 V--
Id Continuous Drain Current1.27 A--
Rds On Drain Source Resistance400 mOhms--
Vgs Gate Source Voltage2 V, - 15 V--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 125 C--
Pd Power Dissipation504 mW--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height1.2 mm--
Length4.4 mm--
ProductMOSFET Small Signal--
SeriesTPS1100--
Transistor Type1 P-Channel--
TypePMOS Switches--
Width3 mm--
BrandTexas Instruments--
Fall Time10 ns--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity150--
SubcategoryMOSFETs--
Typical Turn Off Delay Time13 ns--
Typical Turn On Delay Time4.5 ns--
Unit Weight0.001376 oz--
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