TPN2R703NL,L1Q vs TPN2R703NL vs TPN2R703NL(L1Q(M

 
PartNumberTPN2R703NL,L1QTPN2R703NLTPN2R703NL(L1Q(M
DescriptionMOSFET X35PBF Power MOSFET Trans VGS4.5VVDS30VMOSFET POWER N-CH 90A TSON-8, RL of 5000
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTSON-Advance-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current45 A--
Rds On Drain Source Resistance3.3 mOhms--
Vgs th Gate Source Threshold Voltage2.3 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge21 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation42 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height0.85 mm--
Length3.1 mm--
SeriesTPN2R703NL--
Transistor Type1 N-Channel--
Width3.1 mm--
BrandToshiba--
Product TypeMOSFET--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Unit Weight0.000705 oz--
Top