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| PartNumber | TPN1R603PL,L1Q | TPN1R603PL | TPN1R603PL L1Q M |
| Description | MOSFET N-Ch 30V 2970pF 41nC 33A 30W | ||
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TSON-Advance-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 188 A | - | - |
| Rds On Drain Source Resistance | 1.2 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.1 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 41 nC | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 104 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 0.85 mm | - | - |
| Length | 3.1 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 3.1 mm | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 12 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 5.3 ns | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 42 ns | - | - |
| Typical Turn On Delay Time | 15 ns | - | - |
| Unit Weight | 0.000705 oz | - | - |