TN2640N3-G vs TN2640N3-G P003 vs TN2640N3-G P002

 
PartNumberTN2640N3-GTN2640N3-G P003TN2640N3-G P002
DescriptionMOSFET 400V 5OhmMOSFET N-CH Enhancmnt Mode MOSFETRF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
ManufacturerMicrochipMicrochipMicrochip Technology
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-92-3TO-92-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage400 V400 V-
Id Continuous Drain Current2 A220 mA-
Rds On Drain Source Resistance5 Ohms5 Ohms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation1 W740 mW-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingBulkReelReel
Height5.33 mm5.33 mm-
Length5.21 mm5.21 mm-
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypeFET--
Width4.19 mm4.19 mm-
BrandMicrochip TechnologyMicrochip Technology-
Fall Time22 ns22 ns22 ns
Product TypeMOSFETMOSFET-
Rise Time15 ns15 ns15 ns
Factory Pack Quantity10002000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time20 ns20 ns20 ns
Typical Turn On Delay Time4 ns4 ns4 ns
Unit Weight0.016000 oz0.016000 oz0.016000 oz
Product-MOSFET Small Signal-
Package Case--TO-92-3
Pd Power Dissipation--740 mW
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--220 mA
Vds Drain Source Breakdown Voltage--400 V
Rds On Drain Source Resistance--5 Ohms
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