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| PartNumber | TN0604N3-G | TN0604N3-G P002 | TN0604N3-G P003 |
| Description | MOSFET 40V 0.75Ohm | RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET | RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET |
| Manufacturer | Microchip | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-92-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 700 mA | - | - |
| Rds On Drain Source Resistance | 750 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 600 mV | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 740 mW | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Bulk | - | - |
| Height | 5.33 mm | - | - |
| Length | 5.21 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | FET | - | - |
| Width | 4.19 mm | - | - |
| Brand | Microchip Technology | - | - |
| Forward Transconductance Min | 500 mS | - | - |
| Fall Time | 20 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 6 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 25 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Unit Weight | 0.016000 oz | - | - |