TK31N60W,S1VF vs TK31N60W vs TK31N60W S1VF(S

 
PartNumberTK31N60W,S1VFTK31N60WTK31N60W S1VF(S
DescriptionMOSFET DTMOSIV 600V 88mOhm 30.8A 230W 3000pF
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-247-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current30.8 A--
Rds On Drain Source Resistance73 mOhms--
Vgs th Gate Source Threshold Voltage3.7 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge86 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation230 W--
ConfigurationSingle--
TradenameDTMOSIV--
Height20.95 mm--
Length15.94 mm--
SeriesTK31N60W--
Transistor Type1 N-Channel--
Width5.02 mm--
BrandToshiba--
Fall Time8.5 ns--
Product TypeMOSFET--
Rise Time32 ns--
Factory Pack Quantity30--
SubcategoryMOSFETs--
Typical Turn Off Delay Time165 ns--
Typical Turn On Delay Time70 ns--
Unit Weight1.340411 oz--
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