SUP50010E-GE3 vs SUP50020E vs SUP50020E-GE3

 
PartNumberSUP50010E-GE3SUP50020ESUP50020E-GE3
DescriptionMOSFET 60V Vds; 20V Vgs TO-220ABMOSFET N-CH 60V 120A TO220AB
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220AB-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current150 A--
Rds On Drain Source Resistance2 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge212 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation375 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Transistor Type1 N-Channel--
BrandVishay / Siliconix--
Forward Transconductance Min120 S--
Fall Time13 ns--
Product TypeMOSFET--
Rise Time112 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time50 ns--
Typical Turn On Delay Time28 ns--
Top