SUP40010EL-GE3 vs SUP40012EL-GE3 vs SUP40010EL

 
PartNumberSUP40010EL-GE3SUP40012EL-GE3SUP40010EL
DescriptionMOSFET 40V Vds 20V Vgs TO-220MOSFET 40V Vds +/-20V Vgs TO-220AB
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3TO-220AB-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage40 V40 V-
Id Continuous Drain Current120 A150 A-
Rds On Drain Source Resistance1.47 mOhms1.79 mOhms-
Vgs th Gate Source Threshold Voltage1.2 V1 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge230 nC195 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation375 W150 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameTrenchFET--
PackagingTubeTube-
SeriesSUP--
Transistor Type1 N-Channel1 N-Channel-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min174 S230 S-
Fall Time17 ns18 ns-
Product TypeMOSFETMOSFET-
Rise Time20 ns12 ns-
Factory Pack Quantity50050-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time65 ns65 ns-
Typical Turn On Delay Time16 ns25 ns-
Unit Weight0.063493 oz--
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