STW21NM60N vs STW21NM60N,STW20NM60,W20 vs STW21NM60N,W21NM60N

 
PartNumberSTW21NM60NSTW21NM60N,STW20NM60,W20STW21NM60N,W21NM60N
DescriptionMOSFET N-Ch 600 V 0.18 Ohm 16 A 2nd Gen MDmesh
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-247-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current17 A--
Rds On Drain Source Resistance190 mOhms--
Vgs Gate Source Voltage25 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation140 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height20.15 mm--
Length15.75 mm--
SeriesSTW21NM60N--
Transistor Type1 N-Channel--
TypePower MOSFET--
Width5.15 mm--
BrandSTMicroelectronics--
Forward Transconductance Min12 S--
Fall Time31 ns--
Product TypeMOSFET--
Rise Time15 ns--
Factory Pack Quantity30--
SubcategoryMOSFETs--
Typical Turn Off Delay Time84 ns--
Typical Turn On Delay Time22 ns--
Unit Weight1.340411 oz--
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