STW18N60DM2 vs STW18N60M2 vs STW18N65M5

 
PartNumberSTW18N60DM2STW18N60M2STW18N65M5
DescriptionMOSFET N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-247 packageMOSFET N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-247 packageMOSFET N-Ch 650V 0.198 Ohm 15A MDmesh FET
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247-3TO-247-3TO-247-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V600 V650 V
Id Continuous Drain Current12 A13 A9.4 A
Rds On Drain Source Resistance260 mOhms280 mOhms220 mOhms
Vgs th Gate Source Threshold Voltage2 V2 V5 V
Vgs Gate Source Voltage25 V25 V25 V
Qg Gate Charge20 nC21.5 nC31 nC
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation90 W110 W110 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancement-
TradenameMDmesh-MDmesh
SeriesSTW18N60DM2STW18N60M2STW18N65M5
Transistor Type1 N-Channel-1 N-Channel
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Forward Transconductance Min---
Fall Time32.5 ns10.6 ns9 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time8 ns9 ns7 ns
Factory Pack Quantity600600600
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time9.5 ns47 ns-
Typical Turn On Delay Time13.5 ns12 ns-
Unit Weight1.340411 oz1.340411 oz1.340411 oz
Packaging-TubeTube
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