PartNumber | STW18N60DM2 | STW18N60M2 | STW18N65M5 |
Description | MOSFET N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-247 package | MOSFET N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-247 package | MOSFET N-Ch 650V 0.198 Ohm 15A MDmesh FET |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | 650 V |
Id Continuous Drain Current | 12 A | 13 A | 9.4 A |
Rds On Drain Source Resistance | 260 mOhms | 280 mOhms | 220 mOhms |
Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 5 V |
Vgs Gate Source Voltage | 25 V | 25 V | 25 V |
Qg Gate Charge | 20 nC | 21.5 nC | 31 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 90 W | 110 W | 110 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | - |
Tradename | MDmesh | - | MDmesh |
Series | STW18N60DM2 | STW18N60M2 | STW18N65M5 |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Forward Transconductance Min | - | - | - |
Fall Time | 32.5 ns | 10.6 ns | 9 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 8 ns | 9 ns | 7 ns |
Factory Pack Quantity | 600 | 600 | 600 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 9.5 ns | 47 ns | - |
Typical Turn On Delay Time | 13.5 ns | 12 ns | - |
Unit Weight | 1.340411 oz | 1.340411 oz | 1.340411 oz |
Packaging | - | Tube | Tube |