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| PartNumber | STW13N60M2 | STW13N80K5 | STW13N95K3 |
| Description | MOSFET N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-247 package | MOSFET N-channel 800 V, 0.37 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-247 package | MOSFET N-Ch 950V SuperMESH3 Zener-Protected 10A |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 800 V | 950 V |
| Id Continuous Drain Current | 11 A | 12 A | 10 A |
| Rds On Drain Source Resistance | 380 mOhms | 450 mOhms | 680 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V | 4 V |
| Vgs Gate Source Voltage | 25 V | 30 V | 30 V |
| Qg Gate Charge | 17 nC | 29 nC | 51 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 110 W | 190 W | 190 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | MDmesh | MDmesh | SuperMESH |
| Packaging | Tube | Tube | Tube |
| Series | STW13N60M2 | STW13N80K5 | STW13N95K3 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Fall Time | 9.5 ns | 16 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 10 ns | 16 ns | - |
| Factory Pack Quantity | 600 | 600 | 600 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 41 ns | 42 ns | - |
| Typical Turn On Delay Time | 11 ns | 16 ns | - |
| Unit Weight | 1.340411 oz | 1.340411 oz | 1.340411 oz |