STU7N105K5 vs STU7N60DM2 vs STU7N105KS

 
PartNumberSTU7N105K5STU7N60DM2STU7N105KS
DescriptionMOSFET N-channel 1050 V, 1.4 Ohm typ., 4 A MDmesh K5 Power MOSFETs in IPAK packageMOSFETPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryMOSFETMOSFET-
RoHSY--
TechnologySiSi-
Mounting StyleThrough Hole--
Package / CaseTO-251-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage1.05 kV--
Id Continuous Drain Current4 A--
Rds On Drain Source Resistance2 Ohms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge17 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation110 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameSuperMESH--
SeriesSTU7N105K5STU7N60DM2-
BrandSTMicroelectronicsSTMicroelectronics-
Fall Time25 ns--
Product TypeMOSFETMOSFET-
Rise Time7 ns--
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time43 ns--
Typical Turn On Delay Time17.5 ns--
Unit Weight0.139332 oz--
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