STU13N65M2 vs STU13N60M2 vs STU13NB60

 
PartNumberSTU13N65M2STU13N60M2STU13NB60
DescriptionMOSFET N-channel 650 V, 0.37 Ohm typ., 10 A MDmesh M2 Power MOSFET in IPAK packageMOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2
ManufacturerSTMicroelectronicsSTMicroelectronicsST
Product CategoryMOSFETMOSFETIC Chips
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-251-3TO-251-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage650 V650 V-
Id Continuous Drain Current10 A11 A-
Rds On Drain Source Resistance370 mOhms380 mOhms-
Vgs th Gate Source Threshold Voltage2 V3 V-
Vgs Gate Source Voltage25 V25 V-
Qg Gate Charge17 nC17 nC-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation110 W110 W-
ConfigurationSingleSingle-
Channel ModeEnhancement--
TradenameMDmeshMDmesh-
PackagingTubeTube-
SeriesSTU13N65M2STU13N60M2-
Transistor Type1 N-Channel1 N-Channel-
BrandSTMicroelectronicsSTMicroelectronics-
Fall Time12 ns9.5 ns-
Product TypeMOSFETMOSFET-
Rise Time7.8 ns10 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time38 ns41 ns-
Typical Turn On Delay Time11 ns11 ns-
Unit Weight0.139332 oz0.139332 oz-
Minimum Operating Temperature-- 55 C-
Top