STU11N65M2 vs STU11N65M5 vs STU11NB60

 
PartNumberSTU11N65M2STU11N65M5STU11NB60
DescriptionMOSFET N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in IPAK package
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-251-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage650 V--
Id Continuous Drain Current7 A--
Rds On Drain Source Resistance670 mOhms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage25 V--
Qg Gate Charge12.5 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation85 W--
ConfigurationSingle--
TradenameMDmesh II Plus--
PackagingTube--
ProductPower MOSFET--
SeriesSTU11N65M2--
Transistor Type1 N-Channel--
BrandSTMicroelectronics--
Fall Time15 ns--
Product TypeMOSFET--
Rise Time7.5 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time26 ns--
Typical Turn On Delay Time8.5 ns--
Unit Weight0.139332 oz--
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