STS4DPF20L vs STS4DPF30L vs STS4DPF20

 
PartNumberSTS4DPF20LSTS4DPF30LSTS4DPF20
DescriptionMOSFET P-Ch 20 Volt 4 AmpMOSFET P-Ch 30 Volt 4 Amp
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETFETs - Arrays
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOIC-8SOIC-8-
Number of Channels2 Channel2 Channel2 Channel
Transistor PolarityP-ChannelP-ChannelP-Channel
Vds Drain Source Breakdown Voltage20 V30 V-
Id Continuous Drain Current4 A4 A-
Rds On Drain Source Resistance80 mOhms80 mOhms-
Vgs Gate Source Voltage16 V16 V-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation2 W2 W-
ConfigurationDualDualDual Dual Drain
Channel ModeEnhancementEnhancementEnhancement
TradenameSTripFET--
PackagingReel-Digi-ReelR Alternate Packaging
Height1.65 mm1.65 mm-
Length5 mm5 mm-
SeriesSTS4DPF20LSTS4DPF30LSTripFET
Transistor Type2 P-Channel2 P-Channel2 P-Channel
TypeMOSFETMOSFET-
Width4 mm4 mm-
BrandSTMicroelectronicsSTMicroelectronics-
Fall Time35 ns35 ns35 ns
Product TypeMOSFETMOSFET-
Rise Time35 ns35 ns35 ns
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time125 ns125 ns125 ns
Typical Turn On Delay Time25 ns25 ns25 ns
Unit Weight0.002998 oz0.002998 oz0.002998 oz
Package Case--8-SOIC (0.154", 3.90mm Width)
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--8-SO
FET Type--2 P-Channel (Dual)
Power Max--1.6W
Drain to Source Voltage Vdss--20V
Input Capacitance Ciss Vds--1350pF @ 25V
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--4A
Rds On Max Id Vgs--80 mOhm @ 2A, 10V
Vgs th Max Id--2.5V @ 250μA
Gate Charge Qg Vgs--16nC @ 5V
Pd Power Dissipation--2 W
Vgs Gate Source Voltage--16 V
Id Continuous Drain Current--4 A
Vds Drain Source Breakdown Voltage--- 20 V
Rds On Drain Source Resistance--80 mOhms
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