PartNumber | STS4DPF20L | STS4DPF30L | STS4DPF20 |
Description | MOSFET P-Ch 20 Volt 4 Amp | MOSFET P-Ch 30 Volt 4 Amp | |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET | FETs - Arrays |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOIC-8 | SOIC-8 | - |
Number of Channels | 2 Channel | 2 Channel | 2 Channel |
Transistor Polarity | P-Channel | P-Channel | P-Channel |
Vds Drain Source Breakdown Voltage | 20 V | 30 V | - |
Id Continuous Drain Current | 4 A | 4 A | - |
Rds On Drain Source Resistance | 80 mOhms | 80 mOhms | - |
Vgs Gate Source Voltage | 16 V | 16 V | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 2 W | 2 W | - |
Configuration | Dual | Dual | Dual Dual Drain |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | STripFET | - | - |
Packaging | Reel | - | Digi-ReelR Alternate Packaging |
Height | 1.65 mm | 1.65 mm | - |
Length | 5 mm | 5 mm | - |
Series | STS4DPF20L | STS4DPF30L | STripFET |
Transistor Type | 2 P-Channel | 2 P-Channel | 2 P-Channel |
Type | MOSFET | MOSFET | - |
Width | 4 mm | 4 mm | - |
Brand | STMicroelectronics | STMicroelectronics | - |
Fall Time | 35 ns | 35 ns | 35 ns |
Product Type | MOSFET | MOSFET | - |
Rise Time | 35 ns | 35 ns | 35 ns |
Factory Pack Quantity | 2500 | 2500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 125 ns | 125 ns | 125 ns |
Typical Turn On Delay Time | 25 ns | 25 ns | 25 ns |
Unit Weight | 0.002998 oz | 0.002998 oz | 0.002998 oz |
Package Case | - | - | 8-SOIC (0.154", 3.90mm Width) |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Supplier Device Package | - | - | 8-SO |
FET Type | - | - | 2 P-Channel (Dual) |
Power Max | - | - | 1.6W |
Drain to Source Voltage Vdss | - | - | 20V |
Input Capacitance Ciss Vds | - | - | 1350pF @ 25V |
FET Feature | - | - | Logic Level Gate |
Current Continuous Drain Id 25°C | - | - | 4A |
Rds On Max Id Vgs | - | - | 80 mOhm @ 2A, 10V |
Vgs th Max Id | - | - | 2.5V @ 250μA |
Gate Charge Qg Vgs | - | - | 16nC @ 5V |
Pd Power Dissipation | - | - | 2 W |
Vgs Gate Source Voltage | - | - | 16 V |
Id Continuous Drain Current | - | - | 4 A |
Vds Drain Source Breakdown Voltage | - | - | - 20 V |
Rds On Drain Source Resistance | - | - | 80 mOhms |