STP8NM60 vs STP8NM60D vs STP8NM60FP

 
PartNumberSTP8NM60STP8NM60DSTP8NM60FP
DescriptionMOSFET N-Ch 600 Volt 8 AmpMOSFET N-CH 600V 8A TO-220MOSFET N-CH 650V 8A TO-220FP
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current8 A--
Rds On Drain Source Resistance1 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation100 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height9.15 mm--
Length10.4 mm--
SeriesSTP8NM60FP--
Transistor Type1 N-Channel--
TypeMOSFET--
Width4.6 mm--
BrandSTMicroelectronics--
Forward Transconductance Min2.4 S--
Fall Time10 ns--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time23 ns--
Typical Turn On Delay Time14 ns--
Unit Weight0.050717 oz--
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