STP25NM60ND vs STP25NM60N vs STP25NM60N P25NM60N

 
PartNumberSTP25NM60NDSTP25NM60NSTP25NM60N P25NM60N
DescriptionMOSFET N-channel 600V, 21A FDMesh IIMOSFET N-Ch 600 V 0.14 Ohm 20 A 2nd Gen MDmesh
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3TO-220-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V600 V-
Id Continuous Drain Current21 A20 A-
Rds On Drain Source Resistance160 mOhms140 mOhms-
Vgs Gate Source Voltage25 V25 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation160 W160 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeTube-
Height9.15 mm9.15 mm-
Length10.4 mm10.4 mm-
SeriesSTB25NM60NSTP25NM60N-
Transistor Type1 N-Channel1 N-Channel-
Width4.6 mm4.6 mm-
BrandSTMicroelectronicsSTMicroelectronics-
Fall Time40 ns24 ns-
Product TypeMOSFETMOSFET-
Rise Time30 ns18 ns-
Factory Pack Quantity100050-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time50 ns94 ns-
Typical Turn On Delay Time60 ns24.5 ns-
Unit Weight0.011640 oz0.011640 oz-
Type-MOSFET-
Forward Transconductance Min-17 S-
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